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Transport properties of silicon

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Abstract

Electrical conductivity, thermal conductivity, and thermoelectric power of single-crystalline silicon are investigated at temperatures between 2 and 300 K. From the measured data we calculate the mean free path of electrons and phonons and separate diffusion part and phonon-drag part of the thermoelectric power. Using a new method, we evaluate the mean free path of those phonons which are responsible for the phonon drag effect.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, W-7000, Stuttgart 80, Fed. Rep. Germany

    L. Weber & E. Gmelin

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  1. L. Weber
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  2. E. Gmelin
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Dedicated to H.-J. Queisser on the occasion of his 60th birthday

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Weber, L., Gmelin, E. Transport properties of silicon. Appl. Phys. A 53, 136–140 (1991). https://doi.org/10.1007/BF00323873

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  • DOI: https://doi.org/10.1007/BF00323873

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