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X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth

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Abstract

This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare stoichiometry changes with various oxide removal conditions, and growth effects on sequential epilayers.

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References

  1. C.D. Maxey, J.E. Gower, P. Capper, E.S. O’Keefe, T. Skauli, and C.K. Ard, J. Cryst. Growth 197, 427 (1999).

    Article  CAS  Google Scholar 

  2. T. Golding, R. Hellmer, L. Bubulac, J.H. Dinan, L. Wang, W. Zhao, M. Carmody, H.O. Sankur, and D. Edwall, J. Electron. Mater. 35, 1465 (2007).

    Article  Google Scholar 

  3. S.H. Shin, J.M. Arias, D.D. Edwall, M. Zandian, J.G. Pasko, and R.E. DeWames, J. Vac. Sci. Technol. B 10, 1492 (1992).

    Article  CAS  Google Scholar 

  4. G. Brill, Y. Chen, and P. Wijewarnasuriy, J. Electron. Mater. 40, 1679 (2011).

    Article  CAS  Google Scholar 

  5. Y. Lansari, J.W. Cook, and J.F. Schetzin, J. Electron. Mater. 22, 809 (1993).

    Article  CAS  Google Scholar 

  6. www.galaxywafer.com, 2011.

  7. E. Weiss, O. Klin, S. Grossmanm, S. Greenberg, P.C. Klipstein, R. Akhvlediani, R. Tessler, R. Edrei, and A. Hoffman, J. Vac. Sci. Technol. A 25, 736 (2007).

    Article  CAS  Google Scholar 

  8. Z. Lu, Y. Jiang, W.I. Wang, M.C. Teuch, and R.M. Osgood, J. Vac. Sci. Technol. B 10, 1856 (1992).

    Article  CAS  Google Scholar 

  9. G.R. Bell and C.F. McConville, Appl. Phys. Lett. 69, 2695 (1996).

    Article  CAS  Google Scholar 

  10. L.P. Allen, P. Flint, G. Dallas, D. Bakken, K. Blanchai, G. Brown, S. Vangala, W. Goodhue, and K. Krishnaaswami, Proc. SPIE 7298, 72983 (2009).

    Article  Google Scholar 

  11. J. Huang, L. Mawst, S. Jha, T. Kuech, D. Wang, L. Shterengas, G. Belenky, J. Meyer, and I. Vurgaftman, J. Cryst. Growth 310, 4839 (2008).

    Article  CAS  Google Scholar 

  12. E.J. Petit and F. Houzay, J. Vac. Sci. Technol. B 12, 547 (1994).

    Article  CAS  Google Scholar 

  13. L.S. Hirsch, Z. Yu, S.L. Buczkowski, T.H. Myers, and M.R. Richards-babb, J. Electron. Mater. 26, 534 (1997).

    Article  CAS  Google Scholar 

  14. G.P. Schwartz, G.J. Gualtieri, J.E. Griffith, C.D. Thurmond, and B. Schwartz, J. Electrochem. Soc. 127, 2488 (1980).

    Article  CAS  Google Scholar 

  15. Veeco Application Note 1, 96, 1996.

  16. K.-K. Lee, W. Priyantha, and T.H. Myers, Appl. Phys. Lett. 100, 052108 (2012).

    Article  Google Scholar 

  17. J. Chai, K.-K. Lee, K. Doyle, J.H. Dinan, and T.H. Myers, J. Electron. Mater. doi:10.1007/s11664-012-2054-1.

  18. W.E. Spieer, I. Lindau, P. Pianetta, P.W. Chye, and C.M. Gamer, Thin Solid Films 56, 1 (1979).

    Article  Google Scholar 

  19. T. Van Buuren, M.K. Weilmeier, I. Athwal, K.M. Colbow, J.A. Mackenzie, and T. Tiedje, Appl. Phys. Lett. 59, 464 (1991).

    Article  Google Scholar 

  20. V.T. Bublik, A.N. Morozov, V.M. Smirnov, A.G. Mil’vidskaya, G.P. Kolchina, and Y.S. Safonov, Sov. Phys. Crystallogr. 37, 835 (1992).

    Google Scholar 

  21. D. Sakellari, A. Amariei, O. Valassiades, and E.K. Polychroniadis, Romanian J. Phys. 49, 47 (2004).

    CAS  Google Scholar 

  22. T.W. Kim, D.U. Lee, H.S. Lee, J.Y. Lee, and H.L. Park, Appl. Phys. Lett. 78, 1409 (2000).

    Article  Google Scholar 

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Authors and Affiliations

  1. Material Science, Engineering, and Commercialization Program, Texas State University, San Marcos, TX, 78666, USA

    Kyoung-Keun Lee, Kevin Doyle, Jessica Chai, John H. Dinan & Thomas H. Myers

Authors
  1. Kyoung-Keun Lee
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  2. Kevin Doyle
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  3. Jessica Chai
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  4. John H. Dinan
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  5. Thomas H. Myers
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Correspondence to Kyoung-Keun Lee.

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Lee, KK., Doyle, K., Chai, J. et al. X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth. J. Electron. Mater. 41, 2799–2809 (2012). https://doi.org/10.1007/s11664-012-2085-7

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  • DOI: https://doi.org/10.1007/s11664-012-2085-7

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