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Preparation and Thermoelectric Properties of Polycrystalline In4Sn3−x by Mechanical Alloying and Hot Pressing

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Polycrystalline In4Se3−x thermoelectric materials were prepared by a combined process of mechanical alloying and hot pressing (MA-HP), and the effect of Se deficiency on their thermoelectric properties was studied. Starting from elemental In and Se powders, In4Se3 compound was synthesized after mechanical alloying for 1 h. Single-phase In4Se3 compound was obtained in the sample without Se deficiency, while some In impurity was detected in Se-deficient samples. With increasing Se deficiency x, the carrier concentration n increased, and the electrical resistivity and absolute value of Seebeck coefficient of In4Se3−x decreased rapidly. All of the In4Se3−x samples (x > 0) had higher ZT than the stoichiometric In4Se3, with In4Se2.65 showing the highest ZT because of its low thermal conductivity. The maximum ZT reached 0.93 at 700 K.

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Authors and Affiliations

  1. State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

    Jun-You Yang, Jin Wu, Gen Li, Jian-Sheng Zhang & Jiangying Peng

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  1. Jun-You Yang
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  2. Jin Wu
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  3. Gen Li
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  4. Jian-Sheng Zhang
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  5. Jiangying Peng
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Correspondence to Jun-You Yang.

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Yang, JY., Wu, J., Li, G. et al. Preparation and Thermoelectric Properties of Polycrystalline In4Sn3−x by Mechanical Alloying and Hot Pressing. J. Electron. Mater. 41, 1077–1080 (2012). https://doi.org/10.1007/s11664-012-1948-2

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  • DOI: https://doi.org/10.1007/s11664-012-1948-2

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