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Fabrication and Characterization of Pb(Zr0.53,Ti0.47)O3-Pb(Nb1/3,Zn2/3)O3 Thin Films on Cantilever Stacks

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Abstract

0.9Pb(Zr0.53,Ti0.47)O3-0.1Pb(Zn1/3,Nb2/3)O3 (PZT–PZN) thin films and integrated cantilevers have been fabricated. The PZT–PZN films were deposited on SiO2/Si or SiO2/Si3N4/SiO2/poly-Si/Si membranes capped with a sol–gel-derived ZrO2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT–PZN films on the ZrO2 surface. By controlling these parameters, the electrical properties of the PZT–PZN films, their microstructure, and phase purity were significantly improved. PZT–PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure.

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Authors and Affiliations

  1. University of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX, 75080, USA

    E. Fuentes-Fernandez, W. Debray-Mechtaly, M. A. Quevedo-Lopez & B. Gnade

  2. Texas Micro Power Inc., 7920 Beltline Rd., Suite 1005, Dallas, TX, 75254, USA

    A. Rajasekaran, A. Hande & P. Shah

  3. King Abdullah University of Science & Technology, Thuwal, Saudi Arabia

    H. N. Alshareef

Authors
  1. E. Fuentes-Fernandez
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  2. W. Debray-Mechtaly
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  3. M. A. Quevedo-Lopez
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  4. B. Gnade
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  5. A. Rajasekaran
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  6. A. Hande
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  7. P. Shah
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  8. H. N. Alshareef
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Correspondence to H. N. Alshareef.

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Fuentes-Fernandez, E., Debray-Mechtaly, W., Quevedo-Lopez, M.A. et al. Fabrication and Characterization of Pb(Zr0.53,Ti0.47)O3-Pb(Nb1/3,Zn2/3)O3 Thin Films on Cantilever Stacks. J. Electron. Mater. 40, 85–91 (2011). https://doi.org/10.1007/s11664-010-1407-x

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  • DOI: https://doi.org/10.1007/s11664-010-1407-x

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