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Growth Mechanism of a Ternary (Cu,Ni)6Sn5 Compound at the Sn(Cu)/Ni(P) Interface

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Abstract

The growth mechanism of an interfacial (Cu,Ni)6Sn5 compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)6Sn5 compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)6Sn5 compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)6Sn5 layer could be Cu diffusion in the Sn(Cu) solder matrix.

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Engineering, National Central University, Jhong-Li, Taiwan, R.O.C

    T. S. Huang, H. W. Tseng, C. T. Lu, Y. H. Hsiao, Y. C. Chuang & C. Y. Liu

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  1. T. S. Huang
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  2. H. W. Tseng
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  3. C. T. Lu
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  4. Y. H. Hsiao
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  5. Y. C. Chuang
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  6. C. Y. Liu
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Correspondence to T. S. Huang.

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Huang, T.S., Tseng, H.W., Lu, C.T. et al. Growth Mechanism of a Ternary (Cu,Ni)6Sn5 Compound at the Sn(Cu)/Ni(P) Interface. J. Electron. Mater. 39, 2382–2386 (2010). https://doi.org/10.1007/s11664-010-1339-5

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  • DOI: https://doi.org/10.1007/s11664-010-1339-5

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