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Electron–Electron Interactions in Sb-Doped SnO2 Thin Films

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Electrical conductivity and Hall-effect measurements on undoped and Sb-doped SnO2 thin films prepared by the sol–gel technique were carried out as a function of temperature (55 K to 300 K). Structural characterizations of the films were performed by atomic force microscopy (AFM) and x-ray diffraction (XRD). A doping-induced metal–insulator transition (MIT) was observed. On the metallic side of the transition, the experimental data were interpreted in terms of electron–electron interactions (EEI). The existence of EEI was confirmed by excellent agreement between theoretical and experimental data. The experimental data on the insulator side of the transition were analyzed in terms of variable-range hopping (VRH) conduction. A complete set of parameters describing the properties of the localized electrons, including hopping energy, hopping distance, and the value of the density of states at the Fermi level, was determined.

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Acknowledgements

This work is supported by the State of Planning Organization of Turkey under Grant No. 2001K120590 and the Ankara University BAP under Project Number 2007-07-45-054. We would also like to thank Prof. Dr. Yusuf Kağan Kadıoğlu and Ms. Murat Yavuz for providing XRD and AFM measurements.

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Authors and Affiliations

  1. Department of Physics Engineering, Faculty of Engineering, Ankara University, 06100, Besevler, Ankara, Turkey

    Tülay Serin, Abdullah Yildiz, Necmi Serin, Nurcan Yildirim & Figen Özyurt

  2. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey

    Abdullah Yildiz

  3. Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokular, 06500, Ankara, Turkey

    Mehmet Kasap

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  1. Tülay Serin
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  2. Abdullah Yildiz
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  3. Necmi Serin
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  4. Nurcan Yildirim
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  6. Mehmet Kasap
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Correspondence to Abdullah Yildiz.

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Serin, T., Yildiz, A., Serin, N. et al. Electron–Electron Interactions in Sb-Doped SnO2 Thin Films. J. Electron. Mater. 39, 1152–1158 (2010). https://doi.org/10.1007/s11664-010-1252-y

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  • DOI: https://doi.org/10.1007/s11664-010-1252-y

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