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Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors

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Abstract

Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτ e = 2 × 10−3 cm2 V−1, μτ h = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.

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Acknowledgements

The authors would like to thank Dr. R. David Rauh for fruitful discussion. One of the authors (K.C.M.) acknowledges partial financial support by the Air Force under contract No. FA86540-06-M-5411.

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Authors and Affiliations

  1. EIC Laboratories, Inc, 111 Downey Street, Norwood, MA, 02062, USA

    Krishna C. Mandal, Sung Hoon Kang & Michael Choi

  2. Department of Mechanical Engineering, State University of New York at Stony Brook, Stony Brook, NY, 11794, USA

    Jiuan Wei, Lili Zheng & Hui Zhang

  3. Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    Gerald E. Jellison

  4. Center of Excellence in Physics and Chemistry of Materials, Fisk University, Nashville, TN, 37208, USA

    Michael Groza & Arnold Burger

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  1. Krishna C. Mandal
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  2. Sung Hoon Kang
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  3. Michael Choi
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  4. Jiuan Wei
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  5. Lili Zheng
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  6. Hui Zhang
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  7. Gerald E. Jellison
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  8. Michael Groza
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  9. Arnold Burger
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Correspondence to Krishna C. Mandal.

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Mandal, K.C., Kang, S., Choi, M. et al. Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors. J. Electron. Mater. 36, 1013–1020 (2007). https://doi.org/10.1007/s11664-007-0164-y

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  • DOI: https://doi.org/10.1007/s11664-007-0164-y

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