Abstract
Silicon (211) has been proposed as an alternative substrate for CdTe/HgCdTe molecular beam epitaxial growth. Silicon has a clear advantage over other substrates because of its low cost, high strength, and thermal-expansion coefficient, which matches that of the silicon readout integrated circuit. The (211) orientation has been shown to yield high-quality CdTe and HgCdTe/CdTe layers over other orientations. The reconstruction and faceting of the Si (211) surface is poorly understood despite the importance of the (211) orientation. The results of low-energy electron diffraction (LEED) studies have been contradictory, and their conclusions are inconsistent with recent scanning tunneling microscopy (STM) studies. LEED and STM images were used to determine the most probable Si (211) surface facet structure as a function of annealing temperature. Samples annealed at a high temperature (i.e., >1260°C) allowed the formation of ordered LEED spot patterns as opposed to the typically reported \([\bar 111]\) streaks. The pattern in the \([0\bar 11]\) direction gave a consistent 2× (7.68 Å) reconstruction.
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References
T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu, W.J. Hamilton, and G.S. Kamath, J. Electrochem. Soc. 141, 2888 (1994).
M. Kawano, A. Ajisawa, N. Nagashima, and H. Wada, Appl. Phys. Lett. 69, 2876 (1996).
A. Million, N.K. Dhar, and J.H. Dinan, J. Cryst. Growth 159, 76 (1996).
S. Rujirawat, D.J. Smith, J.P. Faurie, G. Neu, V. Nathan, and S. Sivananthan, J. Electron. Mater. 27, 1047 (1998).
T.J. de Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys. Lett. 66, 2119 (1995).
B. Yang, Y. Xin, S. Rujirawat, N.D. Browning, and S. Sivananthan, J. Appl. Phys. 88, 115 (2000).
X.S. Wang and W.H. Weinberg, Surf. Sci. 314, 71 (1994).
R. Kaplan, Surf. Sci. 116, 104 (1982).
D.J. Chadi, Phys. Rev. B 29, 789 (1984).
A.A. Baski and L.J. Whitman, Phys. Rev. Lett. 74, 956 (1995).
D. Zavitz, A. Evstigneeva, R. Singh, C. Fulk, and M. Trenary, J. Electron. Mater. 34, 6 (2005).
A.A. Baski and L.J. Whitman, J. Vac. Sci. Technol. A 13, 1469 (1995).
A.A. Baski, S.C. Erwin, and L.J. Whiteman, Science 269, 1556 (1995).
A.S. Sun, K.M. Jones, and A.A. Baski, in Cluster and Nanostructure Interfaces, edited by P. Jena, S.N. Khanna, and B.K. Rao (Singapore: World Scientific, 2000) pp. 607–612.
S. Prasenjit, I.P. Batra, S. Sivananthan, and C.H. Grein, Phys. Rev. B 68, 045314 (2003).
C. Bikash, I.P. Batra, and S. Sivananthan, Phys. Rev. B 71, 075328 (2005).
B.Z. Olshanetsky and V.I. Mashanov, Surf. Sci. 111, 414 (1981).
S.L. Wright, H. Kroemer, and M. Inada, J. Appl. Phys. 55, 2916 (1984).
C.H. Grein, J. Cryst. Growth 180, 54 (1997).
LEED I-V curves, however, do have this ability. This article focuses only on geometric arguments of identifying the symmetry of the Si(211) surface.
H. Wagner, Physical and Chemical Properties of Stepped Surfaces: Tracts in Modern Physics (Berlin: Springer-Verlag) Vol. 85.
W. Kern, J. Electrochem. Soc. 137, 1887 (1990).
R.M. Feenstra and J.A. Stroscio, Phys. Rev. Lett. 59, 2173 (1987).
J. Knall, Phys. Rev. Lett. 66, 1733 (1991).
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Fulk, C., Sivananthan, S., Zavitz, D. et al. The structure of the Si (211) surface. J. Electron. Mater. 35, 1449–1454 (2006). https://doi.org/10.1007/s11664-006-0282-y
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DOI: https://doi.org/10.1007/s11664-006-0282-y