Skip to main content
Log in

Geometrical effect of bump resistance for flip-chip solder joints: Finite-element modeling and experimental results

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The bump resistance of flip-chip solder joints was measured experimentally and analyzed by the finite-element method. Kelvin structures for flip-chip solder joints were designed and fabricated to measure the bump resistance. The measured value was only about 0.9 mΘ at room temperature, which was much lower than that expected. Three-dimensional (3-D) modeling was performed to examine the current and voltage distribution in the joint. The simulated value was 7.7 mΘ, which was about 9 times larger than the experimental value. The current crowding effect was found to be responsible for the difference in bump resistance. Therefore, the measured bump resistance strongly depended on the layout of the Kelvin structure. Various layouts were simulated to investigate the geometrical effect of bump resistance, and a significant geometrical effect was found. A proper layout was proposed to measure the bump resistance correctly. The Kelvin structure would play an important role in monitoring void formation and microstructure changes during the electromigration of flip-chip solder joints.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. International Technology Roadmap for Semiconductors (San Jose, CA: Semiconductor Industry Association, 2003), pp. 4–9.

  2. K.N. Tu and K. Zeng, Mater. Sci. Eng., R R34, 1 (2001).

    Article  CAS  Google Scholar 

  3. T.L. Shao, S.H. Chiu, Chih Chen, D.J. Yao, and C.Y. Hsu, J. Electron. Mater. 33, 1350 (2004).

    Article  CAS  Google Scholar 

  4. S.J. Proctor and L.W. Linholm, IEEE Electron Dev. Lett. EDL-3, 294 (1982).

    Google Scholar 

  5. W.M. Loh, K. Saraswat, and R.W. Dutton, IEEE Electron Dev. Lett. EDL-6, 105 (1985).

    Google Scholar 

  6. M. Natan, S. Purushothan, and R. Dobrowski, J. Appl. Phys. 53, 5776 (1982).

    Article  Google Scholar 

  7. D.S. Liu and C.Y. Ni, Microelectron. Eng. 63, 363 (2002).

    Article  CAS  Google Scholar 

  8. K.N. Tu, J. Appl. Phys. 94, 5451 (2003).

    Article  CAS  Google Scholar 

  9. S. Gee, N. Nguyen, J. Huang, and K.N. Tu, Proceedings of 2005 International Wafer-level Packaging Conference (IWLPC), (San Jose, CA: Surface Mount Technology Association), pp. 159–167.

  10. P. Su, M. Ding, T. Uehling, D. Wontor, and P.S. Ho, Proc. Electronic Components and Technology Conf. (Piscataway, NJ: IEEE, 2005), pp. 1431–1436.

    Google Scholar 

  11. B. Ebersberger, R. Bauer, and L. Alexa, Proc. Electronic Components and Technology Conf. (Piscataway, NJ: IEEE, 2005), pp. 1407–1415.

    Google Scholar 

  12. T.L. Shao, S.W. Liang, T.C. Lin, and C. Chen, J. Appl. Phys. 98, 044509 (2005).

    Google Scholar 

  13. J.H. Kiely, D.V. Morgan, and D.M. Rowe, Meas. Sci. Technol. 5(2), 182 (1994).

    Article  CAS  Google Scholar 

  14. C.N. Liao, C. Chen, and K.N. Tu, J. Appl. Phys. 86, 3204 (1999).

    Article  CAS  Google Scholar 

  15. J. Zhang and D. Baldwin, Proc. IEEE 8th Int. Symp. on Advanced Packaging Materials (Piscataway, NJ: IEEE, 2002), pp. 97–103.

    Book  Google Scholar 

  16. M. Amagai, Y. Toyoda, T. Ohnishi, and S. Akita, Proc. Electronic Components and Technology Conf. (Piscataway, NJ: IEEE, 2004), pp. 1304–1309.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Liang, S.W., Chang, Y.W., Chen, C. et al. Geometrical effect of bump resistance for flip-chip solder joints: Finite-element modeling and experimental results. J. Electron. Mater. 35, 1647–1654 (2006). https://doi.org/10.1007/s11664-006-0212-z

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-006-0212-z

Key words

Navigation