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Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

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Abstract

A Si wafer was sequentially sputter-coated with Ti (20 nm), Cu (6 µm), Sn (4 µm), and In (4 µm). The specimen was then diffusion-soldered at temperatures between 150 and 300°C with an alumina substrate deposited with Cu (4 µm) and Au (6 µm). Experimental results showed that a multilayer of intermetallic phases with the compositions of (Cu0.99Au0.01)6(Sn0.52In0.48)5/(Au0.87Cu0.13)(In0.94Sn0.06)2/(Au0.98Cu0.02) (In0.95Sn0.05) formed at the Au/Cu interface. Kinetic analyses revealed that the growth of (Cu0.99Au0.01)6 (Sn0.52In0.48)5 and (Au0.87Cu0.13)(In0.94Sn0.06)2/(Au0.98Cu0.02)(In0.95Sn0.05) intermetallics were diffusion-controlled with activation energies of 21.5 and 31.3 kJ/mol, respectively. Sound tensile strengths of 42 and 48 kg/cm2 have been obtained under the bonding conditions of 150°C for 40 min. and 200°C for 30 min., respectively.

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Authors and Affiliations

  1. Institute of Materials Science and Engineering, National Taiwan University, 106, Taipei, Taiwan

    Tung-Han Chuang, Hsiu-Jen Lin & Cheng-Wen Tsao

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  1. Tung-Han Chuang
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  2. Hsiu-Jen Lin
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  3. Cheng-Wen Tsao
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Chuang, TH., Lin, HJ. & Tsao, CW. Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer. J. Electron. Mater. 35, 1566–1570 (2006). https://doi.org/10.1007/s11664-006-0150-9

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  • DOI: https://doi.org/10.1007/s11664-006-0150-9

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