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Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications

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Abstract

Al/Ti films were deposited on 128° Y-X LiNbO3 substrates by electron-beam (e-beam) deposition. Low-energy Ar ion beam bombardment was employed during the Ti underlayer deposition. Influence of low-energy beam bombardment on the texture of Al/Ti films was investigated by x-ray diffraction (XRD) analysis. It was found that Al films deposited on Ar-ion bombarded Ti underlayers possessed excellent (111) texture. With the textured Al/Ti films, a 2.3-GHz range image-impedance connection surface acoustic wave (SAW) filter was successfully fabricated.

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Authors and Affiliations

  1. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, People’s Republic of China

    D. M. Li & F. Pan

  2. Department of Chemistry, Xinjiang University, 830046, Wulumuqi, People’s Republic of China

    D. M. Li

  3. Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, People’s Republic of China

    J. B. Niu & M. Liu

Authors
  1. D. M. Li
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  2. F. Pan
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  3. J. B. Niu
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  4. M. Liu
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Li, D.M., Pan, F., Niu, J.B. et al. Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications. J. Electron. Mater. 34, 1053–1058 (2005). https://doi.org/10.1007/s11664-005-0095-4

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  • DOI: https://doi.org/10.1007/s11664-005-0095-4

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