Abstract
We have initiated a joint effort to better elucidate the fundamental mechanisms underlying As-doping in molecular beam epitaxy (MBE)-grown HgCdTe. We have greatly increased the As incorporation rate by using an As cracker cell. With a cracker temperature of 700°C, As incorporation as high as 4×1020 cm−3 has been achieved by using an As-reservoir temperature of only 175°C. This allows the growth of highly doped layers with high quality as measured by low dislocation density. Annealing experiments show higher As-activation efficiency with higher anneal temperatures for longer time and higher Hg overpressures. Data are presented for layers with a wide range of doping levels and for layer composition from 0.2 to 0.6.
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Edwall, D., Piquette, E., Ellsworth, J. et al. Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe. J. Electron. Mater. 33, 752–756 (2004). https://doi.org/10.1007/s11664-004-0077-y
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DOI: https://doi.org/10.1007/s11664-004-0077-y