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Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique

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Abstract

Rutherford backscattering spectrometry (RBS) combined with the channeling technique has been applied to a GaAs1−xBix epilayer to investigate concentration and lattice location of Bi atoms and crystalline quality of the epilayer. The metastable GaAs1−xBix alloy layer was grown on a GaAs substrate at a temperature as low as 365°C. The GaBi mole fraction obtained was 2.6 ± 0.2%. Angular scans for [100] and [111] crystal directions reveal that the incorporated Bi atoms exactly occupy substitutional sites in the GaAs crystal lattice. Crystal perfection of the GaAs1−xBix metastable alloy is fairly good in spite of the low growth temperature.

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Authors and Affiliations

  1. Department of Chemistry and Materials Technology, Kyoto Institute of Technology, 606-8585, Kyoto, Japan

    Katsumi Takahiro & Kiyoshi Kawatsura

  2. Department of Electronics and Information Science, Kyoto Institute of Technology, Japan

    Kunishige Oe

  3. Department of Mechanical System Engineering, Hiroshima University, 739-8527, Higashi-Hiroshima, Japan

    Fumitaka Nishiyama

Authors
  1. Katsumi Takahiro
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  2. Kiyoshi Kawatsura
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  3. Kunishige Oe
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  4. Fumitaka Nishiyama
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Takahiro, K., Kawatsura, K., Oe, K. et al. Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique. J. Electron. Mater. 32, 34–37 (2003). https://doi.org/10.1007/s11664-003-0250-8

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  • DOI: https://doi.org/10.1007/s11664-003-0250-8

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