Abstract
The effects of various elements of substrate metallization, namely, Au, Ni, and P, on the solder/under-bump metallization (UBM), (Al/Ni(V)/Cu) interfacial reactions in flip-chip packages during multiple reflow processes were systematically investigated. It was found that Au and P had negligible effects on the liquid-solid interfacial reactions. However, Ni in the substrate metallization greatly accelerated the interfacial reactions at chip side and degraded the thermal stability of the UBM through formation of a (Cu,Ni)6Sn5 ternary compound at the solder/UBM interface. This phenomenon can be explained in terms of enhanced grain-boundary grooving on (Cu,Ni)6Sn5 in the molten solder during the reflow process. This could eventually cause the rapid spalling of an intermetallic compound (IMC) from the solder/UBM interface and early failure of the packages. Our results showed that formation of multicomponent intermetallics, such as (Cu,Ni)6Sn5 or (Ni,Cu)3Sn4, at the solder/UBM interface is detrimental to the solder-joint reliability.
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Zhang, F., Li, M., Chum, C.C. et al. Effects of substrate metallization of solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles. J. Electron. Mater. 32, 123–130 (2003). https://doi.org/10.1007/s11664-003-0182-3
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DOI: https://doi.org/10.1007/s11664-003-0182-3