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Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

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Abstract

Surface-void defects observed in Hg1−xCdxTe (x ∼ 0.2–0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te intergrowths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.

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Authors and Affiliations

  1. Center for Solid State Science, Arizona State University, 85287, Tempe, AZ

    T. Aoki & David J. Smith

  2. Microphysics Laboratory, Physics Department, University of Illinois, 60607, Chicago, IL

    Y. Chang, G. Badano, J. Zhao, C. Grein & S. Sivananthan

  3. Department of Physics and Astronomy, Arizona State University, 85287, Tempe, AZ

    David J. Smith

Authors
  1. T. Aoki
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  2. Y. Chang
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  3. G. Badano
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  4. J. Zhao
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  5. C. Grein
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  6. S. Sivananthan
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  7. David J. Smith
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Aoki, T., Chang, Y., Badano, G. et al. Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy. J. Electron. Mater. 32, 703–709 (2003). https://doi.org/10.1007/s11664-003-0056-8

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  • DOI: https://doi.org/10.1007/s11664-003-0056-8

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