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High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate

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Abstract

The structural properties of molecular beam epitaxially (MBE)-grown Hg1−x Cd x Te epilayers on CdZnTe (211) substrate have been investigated using high-resolution x-ray topography and rocking curves. High-resolution x-ray diffraction 2θ–θ scans of (422) reflections were utilized in calculating the out-of-plane lattice parameters of the HgCdTe layer and the CdZnTe substrate. The lattice strain of the HgCdTe layer was evaluated using the in-plane measurements of the (311) reflection. Etching seemed to improve the surface of the substrate by removing any damage caused by polishing or any post-processing. In spite of some localized line dislocations, a remarkable quality of the MBE-grown HgCdTe layer was observed. The full width at half maximum values of the HgCdTe layer and the CdZnTe substrate were determined as 43 arc-s and 16.2 arc-s, respectively.

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Acknowledgements

The authors gratefully acknowledge helpful discussions with Dr. Yuanping Chen, Dr. Brenda VanMil and Mr. Sina Simingalam from the U.S. Army Research Laboratory.

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Authors and Affiliations

  1. Brimrose Technology, Sparks Glencoe, MD, USA

    Priyanthi M. Amarasinghe

  2. U.S. Naval Research Laboratory, Washington, DC, USA

    Syed B. Qadri

  3. U.S. Army Research Laboratory, Adlephi, MD, USA

    Priyalal S. Wijewarnasuriya

Authors
  1. Priyanthi M. Amarasinghe
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  2. Syed B. Qadri
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  3. Priyalal S. Wijewarnasuriya
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Correspondence to Priyanthi M. Amarasinghe.

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Amarasinghe, P.M., Qadri, S.B. & Wijewarnasuriya, P.S. High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate. J. Electron. Mater. 44, 2762–2767 (2015). https://doi.org/10.1007/s11664-015-3695-7

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  • DOI: https://doi.org/10.1007/s11664-015-3695-7

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