Abstract
The erosion rate of resist during electron cyclotron resonance (ECR) plasma etching of II-VI semiconductors is the limiting factor for the selectivity (values range from 5:1 to 10:1). We have measured the erosion rates of AZ 1529, a commercially available diazonaphthoquinone (DNQ) novolak photoresist, under plasma conditions optimized for etching of the underlying semiconductor and have developed an in-situ technique to “harden” the resist by exposing it to an argon-only ECR plasma. A subsequent standard plasma process can then be used to etch the II-VI material, thereby achieving selectivity values greater than 50:1.
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Stoltz, A.J., Benson, J.D., thomas, M. et al. Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors. J. Electron. Mater. 31, 749–753 (2002). https://doi.org/10.1007/s11664-002-0231-3
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DOI: https://doi.org/10.1007/s11664-002-0231-3