Skip to main content
SpringerLink
Log in

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

  • Special Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The curing process of polyimide and the electromigration of copper films with polyimide (PI) passivation are studied. Thermal analysis of polyimide suggests that imidization completes at ∼200°C with an endothermic reaction associated with the breaking of the C-OH and N-H bonds as revealed by Fourier transformation infrared spectroscopy (FTIR). Although there is 89.8% weight loss when PI is heated from 20°C to 200°C, outgassing of PI passivation is still observed at higher temperatures. Carbon, nitrogen, and oxygen atoms diffuse into Cu during thermal processing of PI/Cu films. The tetraethyl orthosilicate (TEOS) SiO2 films are used as the barrier layer between PI and Cu to retard the poisoning of Cu. The effect of TEOS SiO2 film on electromigration of Cu is investigated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.Y. Liu, C. Chen, C.N. Liao, and K.N. Tu, Appl. Phys. Lett. 75, 58 (1999).

    Article  CAS  Google Scholar 

  2. C.-K. Hu, K.Y. Lee, L. Gignac, and R. Carruthers, Thin Solid Films 308–309, 443 (1997).

    Article  Google Scholar 

  3. C.-K. Hu, B. Luther, F.B. Kaufman, J. Hummel, C. Uzoh, and D.J. Pearson, Thin Solid Films 262, 84 (1995).

    Article  CAS  Google Scholar 

  4. T. Homma, Mater. Sci. Eng. 23, 243 (1998).

    Article  Google Scholar 

  5. H.W. Wang, B.S. Chiou, and J.S. Jiang, J. Mater. Sci.: Mater. Electron. 10, 267 (1999).

    Article  CAS  Google Scholar 

  6. H.W. Wang and B.S. Chiou, J. Mater. Sci.: Mater. Electron. 11, 17 (2000).

    Article  Google Scholar 

  7. J.S. Jiang and B.S. Chiou, Int. J. Microcircuits Electron. Package 22, 395 (1999).

    CAS  Google Scholar 

  8. S. Wolf, Silicon Processing for VLSI Era (Long Beach, CA: Lattice Press, 1990), vol. 2, p. 198.

    Google Scholar 

  9. C.Y. Chang and S.M. Sze, ULSI Technology (New York: McGraw-Hill Book Co., Inc., 1996), p. 246.

    Google Scholar 

  10. D.S. Soane and Z. Martynenko, Polymers in Microelectrics: Fundamentals and Applications (Amsterdam, Netherlands: Elsevier Science Publishers B.V., 1989), p. 153.

    Google Scholar 

  11. T.C. Chang, K.H. Wu and Y.S. Chiu, Polym. Degrad. Stab. 63, 103 (1999).

    Article  CAS  Google Scholar 

  12. P.D. Chung, Master’s thesis, National Chiao Tung University, Hsinchu, Taiwan, June 1997.

    Google Scholar 

  13. P.L. Rossiter, The Electrical Resistivity of Metals and Alloys (New York: Cambridge University Press, 1987), pp. 9, 185, 218, and 290.

    Google Scholar 

  14. S. Riedel, J. Röber and T. Gessner, Microelectron. Eng. 33, 165 (1997).

    Article  CAS  Google Scholar 

  15. M.S.P. Lucas, J. Appl. Phys. 36, 1632 (1965).

    Article  CAS  Google Scholar 

  16. S.P. Murarka, Mater. Sci. Eng. 19, 87 (1997).

    Article  Google Scholar 

  17. D. Save, F. Braud, J. Torres, F. Binder, C. Müller, J.O. Weidner, and W. Hasse, Microelectron. Eng. 33, 75 (1997).

    Article  CAS  Google Scholar 

  18. J.B. Webb, D. Northcott, and I. Emesh, Thin Solid Films 270, 483 (1995).

    Article  CAS  Google Scholar 

  19. B.H. Jo and R.W. Vook, Appl. Surf. Sci. 89, 237 (1995).

    Article  CAS  Google Scholar 

  20. B.H. Jo and R.W. Vook, Thin Solid Films 262, 129 (1995).

    Article  CAS  Google Scholar 

  21. F. Fantini, J.R. Lloyd, I.D. Munari, and A. Scorzoni, Microelectron. Eng. 40, 207 (1998).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

    Hanyi Hung & Bi-Shiou Chiou

Authors
  1. Hanyi Hung
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Bi-Shiou Chiou
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hung, H., Chiou, BS. Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation. J. Electron. Mater. 31, 82–87 (2002). https://doi.org/10.1007/s11664-002-0177-5

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-002-0177-5

Keywords

Search

Navigation