Abstract
Because of the high concentration of threading dislocations, the reverse current-voltage (I–V) characteristics for either homo- or heterojunctions made on GaN-based materials grown on sapphire often show a strong electric field dependence (called a soft breakdown characteristic), which can be described by a power law I=Vn, with n between 4 to 5. We find a significant increase of reverse currents associated with the early degradation of emission in InGaN blue single-quantum-well light-emitting diodes (LEDs) subjected to aging tests (injected current of 70 mA over a total time of about 300 h). The formation of dislocations might be due to the relaxation of strain in the thin InGaN active layer during the aging tests.
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Fang, Z.Q., Reynolds, D.C. & Look, D.C. Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes. J. Electron. Mater. 29, 448–451 (2000). https://doi.org/10.1007/s11664-000-0159-4
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DOI: https://doi.org/10.1007/s11664-000-0159-4