Abstract
Laser-induced backside wet etching using water solution of plasmon precursor (AgNO3) as an absorbing medium provides effective structuring of such a complex material as sapphire. At the same time, this process is accompanied by the formation of silver nanoparticles and a significant modification of a surface layer of sapphire. Hybrid plasmon structures are formed on the surface of sapphire. In this paper, the structure and phase composition of surface layer formed during the transformation of the materials in the process of etching have been studied using electron microscopy methods, electron diffraction, and EDX analysis; possibilities of creating of new plasmon nanostructures have been analyzed.
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Acknowledgments
This work was supported by the Ministry of Science and Higher Education within the State assignment FSRC «Crystallography and Photonics» RAS in part of the TEM and SEM investigation and development of microstructuring technologies and the Russian Foundation for Basic Research in part of the design of the laser facility (Grant No. 18-02-00420 A) and in part of the studies on sapphire etching processes (Grant No. 18-29-06056 MK). Electron microscopy investigations were carried out using equipment of the Shared Research Center of the Institute of Crystallography, Russian Academy of Sciences (project RFMEFI62119X0035).
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Zhigalina, O.M., Khmelenin, D.N., Atanova, A.V. et al. A Nanoscale Modification of Materials at Thermoplasmonic Laser-Induced Backside Wet Etching of Sapphire. Plasmonics 15, 599–608 (2020). https://doi.org/10.1007/s11468-019-01091-9
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DOI: https://doi.org/10.1007/s11468-019-01091-9