Abstract
Typically, highly p-doped (2×1018 cm−3) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2×1016 cm−3) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.
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Wang, C., Fan, D., Wang, C. et al. Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization. Sci. China Phys. Mech. Astron. 53, 111–115 (2010). https://doi.org/10.1007/s11433-010-0084-3
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DOI: https://doi.org/10.1007/s11433-010-0084-3