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Efficient multi-level fault simulation of HW/SW systems for structural faults

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Abstract

In recent technology nodes, reliability is increasingly considered a part of the standard design flow to be taken into account at all levels of embedded systems design. While traditional fault simulation techniques based on low-level models at gate- and register transfer-level offer high accuracy, they are too inefficient to properly cope with the complexity of modern embedded systems. Moreover, they do not allow for early exploration of design alternatives when a detailed model of the whole system is not yet available, which is highly required to increase the efficiency and quality of the design flow. Multi-level models that combine the simulation efficiency of high abstraction models with the accuracy of low-level models are therefore essential to efficiently evaluate the impact of physical defects on the system. This paper proposes a methodology to efficiently implement concurrent multi-level fault simulation across gate- and transaction-level models in an integrated simulation environment. It leverages state-of-the-art techniques for efficient fault simulation of structural faults together with transaction-level modeling. This combination of different models allows to accurately evaluate the impact of faults on the entire hardware/software system while keeping the computational effort low. Moreover, since only selected portions of the system require low-level models, early exploration of different design alternatives is efficiently supported. Experimental results obtained from three case studies are presented to demonstrate the high accuracy of the proposed method when compared with a standard gate/RT mixed-level approach and the strong improvement of simulation time which is reduced by four orders of magnitude in average.

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Correspondence to Rafal Baranowski.

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Baranowski, R., Di Carlo, S., Hatami, N. et al. Efficient multi-level fault simulation of HW/SW systems for structural faults. Sci. China Inf. Sci. 54, 1784–1796 (2011). https://doi.org/10.1007/s11432-011-4366-9

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  • DOI: https://doi.org/10.1007/s11432-011-4366-9

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