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Operation methods of resistive random access memory

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Abstract

In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.

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Authors and Affiliations

  1. Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384, China

    GuoMing Wang, HongTao Liu & BaoHe Yang

  2. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    GuoMing Wang, ShiBing Long, MeiYun Zhang, Yang Li, XiaoXin Xu, HongTao Liu, Ming Wang, PengXiao Sun, HaiTao Sun, Qi Liu, HangBing Lü & Ming Liu

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  1. GuoMing Wang
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  2. ShiBing Long
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  3. MeiYun Zhang
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  4. Yang Li
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Correspondence to ShiBing Long or BaoHe Yang.

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Wang, G., Long, S., Zhang, M. et al. Operation methods of resistive random access memory. Sci. China Technol. Sci. 57, 2295–2304 (2014). https://doi.org/10.1007/s11431-014-5718-7

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