Abstract
Stable radicals are challenging to prepare due to their intrinsic high reactivity. Herein, three trisphenolamine radicals were readily synthesized and exhibited unexpected thermal/electrochemical stability and semiconductor property. These three nitroxide radicals could be considered as a class of aromatized nitro groups or HNO3 derivatives. The closed-shell nitro-like and open-shell nitroxide resonance structure contribute to their outstanding stability. Furthermore, the tunable ground states, extremely low band gap and p-type charge transport properties were systematically investigated. More importantly, the work presents the concept of aromatic inorganic acid radical (AIAR) and aggregation-induced radical (AIR) mechanism to understand the intrinsic structure-property relationship of these radicals. In addition, we provide a novel strategy for the design of stable and low bandgap radicals for organic electronics, magnetics, spintronics, etc.
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Acknowledgements
This work was supported by the Pearl River S&T Nova Program of Guangzhou (201710010194), the National Natural Science Foundation of China (61574061, 21520102006, 21634004, 51521002, 91633301), and the Foundation of Guangzhou Science and Technology Project (201707020019).
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Zhou, J., Zhu, W., Zeng, M. et al. Aromatic inorganic acid radical. Sci. China Chem. 62, 1656–1665 (2019). https://doi.org/10.1007/s11426-019-9641-2
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DOI: https://doi.org/10.1007/s11426-019-9641-2