Infrared photodetectors with germanium quantum dots on silicon are considered. Some characteristics of such detectors are calculated, namely: dark current and detectivity in the modes of limitation by background and generation-recombination noises. A comparison is also made of the performance of quantum-dot infrared detectors with the performance of HgCdTe detectors.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 8–14, July, 2018.
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Douhan, R.M.H., Kokhanenko, A.P. & Lozovoy, K.A. Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures. Russ Phys J 61, 1194–1201 (2018). https://doi.org/10.1007/s11182-018-1517-0
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DOI: https://doi.org/10.1007/s11182-018-1517-0