Total conductance of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.23) grown by molecular beam epitaxy has been studied in the temperature range 8–150 K at frequencies of alternating test signal 2 kHz – 2 MHz. It is found that for structures with a near-surface graded-gap layer and an increased content of CdTe, the differential resistance of space charge region increases significantly, as the temperature decreases from 77 to 8 K, and for structures without a graded-gap layer, the changes in the differential resistance of space charge region are nonmonotonic and relatively small. These results can be explained by the fact that at 8–77 K, for structures without graded-gap layers, the differential resistance of the space charge region is limited by tunneling via deep levels, and for structures with graded-gap layers, it is limited by the Shockley-Read generation processes.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Rogal’skii, Infrared Detectors, Nauka, Novosibirsk (2003).
A. V. Voitsekhovskii and V. N. Davydov, Photoelectric MIS Structures based on Narrow-Gap Semiconductors, Radio i Svyas, Tomsk (1990).
V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Matrix Infrared Photodetectors, Nauka, Novosibirsk (2001).
A. V. Voitsekhovskii, S. N. Nesmelov, A. P. Kokhanenko, et al., Russ. Phys. J., 48, No. 2, 143–147 (2005).
V. V. Vasil’ev and Yu. P. Mashukov, Fiz. Tekh. Poluprovodn., 41, No. 1, 38–43 (2007).
V. V. Vasil’ev and Yu. P. Mashukov, Prikladn. Fiz., No. 4, 106–110 (2010).
V. N. Ovsyuk and A. V. Yartsev, Proc. SPIE, 6636, 663617–663621 (2007).
V. N. Ovsyuk and A. V. Yartsev, Prikladn. Fiz., No. 5, 80–83 (2007).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Fiz. Tekh. Poluprovodn., No. 11, 1327–1332 (2008).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Opto-Electron. Rev., 18, No. 3, 259–262 (2010).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Thin Solid Films, 522, 261–266 (2012).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Thin Solid Films, 551, 92–97 (2014).
M. A. Kinch, Semicond. Semimet., 18, 313–385 (1981).
M. W. Goodwin, M. A. Kinch, and R. J. Koestner, J. Vac. Sci. Technol., A7, No. 2, 523–527 (1989).
M. J. Yang, C. H. Yang, M. A. Kinch, and J. D. Beck, Appl. Phys. Lett., 54, No. 3, 265–267 (1989).
M. Zvara, R. Grill, P. Hlidek, et al., Semicond. Sci. Tecnol., No. 10, 1145–1150 (1995).
M. Zvara, R. Grill, P. Hlidek, et al., Semicond. Sci. Tecnol., No. 11, 1718–1724 (1996).
W. He and Z. Celik-Butler, Solid-State Electron., 39, No. 1, 127–132 (1996).
V. V. Antonov, Investigation of Electrophysical and Photoelectric Characteristics of MOS Structures based on Mercury Cadmium Telluride, Thesis Phys. And Math. Sci., Tomsk (1985).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Russ. Phys. J., 48, No. 6, 584–591 (2005).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Russ. Phys. J., 52, No. 10, 1003–1020 (2009).
V. I. Gaman, Physics of Semiconductor Devices, Isd. Nauchn. Tekhn. Liter., Tomsk, (2000).
R. K. Bhan and V. Dhar, Infrared Phys. Technol., 41, 155–162 (2000).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Russ. Phys. J., 55, No. 8, 910–916 (2012).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 102–109, April, 2014.
Rights and permissions
About this article
Cite this article
Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.М. et al. Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–x Cd x Te (x = 0.23) in a Wide Temperature Range. Russ Phys J 57, 536–544 (2014). https://doi.org/10.1007/s11182-014-0272-0
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-014-0272-0