Physical principles of operation of oxygen and nitrogen dioxide sensors based on thin polycrystalline metal oxide semiconductor films are considered. Analytical expressions describing dependences of the sensor conductivity and the sensor response to the oxidizing gas concentration and geometrical and physical parameters of the semiconductor film are presented. The theoretical dependences obtained are compared with the available results of experimental investigations.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 58–65, December, 2011.
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Gaman, V.I. Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors. Russ Phys J 54, 1364–1371 (2012). https://doi.org/10.1007/s11182-012-9755-z
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DOI: https://doi.org/10.1007/s11182-012-9755-z