Abstract
The implantation of an additional p+ layer into the substrate of a silicon n+-p photodiode is theoretically evaluated as a method for adjusting its spectral response. It is shown that a fairly small p+-p potential barrier so created will greatly reduce the collection of electrons excited by long-wavelength photons in the bulk of the substrate. A suitable doping concentration is estimated at 1017 cm−3 by computer simulation. It is also found that boron-ion implantation in the energy range 300–800 keV will ensure adjustment of the spectral response in the visible range. A manageable analytical model is constructed.
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Translated from Mikroelektronika, Vol. 34, No. 3, 2005, pp. 190–195.
Original Russian Text Copyright © 2005 by Vanyushin, Gergel’, Zimoglyad, Tishin.
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Vanyushin, I.V., Gergel’, V.A., Zimoglyad, V.A. et al. Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation. Russ Microelectron 34, 155–159 (2005). https://doi.org/10.1007/s11180-005-0024-5
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DOI: https://doi.org/10.1007/s11180-005-0024-5