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Silicon Photodiode for Visible Spectral Region

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Journal of Applied Spectroscopy Aims and scope

We consider the design and spectral characteristics of a photodiode with a graded n-i-p junction made by implantation of As and P into silicon with resistivity 1 kiloohm·cm. The quantum effi ciency of the photodiode is higher than 90 % in the spectral range 530–700 nm.

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Authors and Affiliations

  1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost′ Ave., Minsk, 220072, Belarus

    V. I. Blynski & E. S. Holub

  2. OJSC “Integral”, Minsk, Belarus

    A. M. Lemeshevskaya

Authors
  1. V. I. Blynski
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  2. E. S. Holub
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  3. A. M. Lemeshevskaya
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Corresponding author

Correspondence to V. I. Blynski.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 81, No. 2, pp. 321–323, March–April, 2014.

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Blynski, V.I., Holub, E.S. & Lemeshevskaya, A.M. Silicon Photodiode for Visible Spectral Region. J Appl Spectrosc 81, 317–319 (2014). https://doi.org/10.1007/s10812-014-9930-9

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  • DOI: https://doi.org/10.1007/s10812-014-9930-9

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