Abstract
For the purpose of realizing a low-cost production process of silane (SiH4) gas, we have proposed the high-rate etching of metallurgical-grade Si by narrow-gap microwave hydrogen plasma. In this paper, effect of hydrogen gas flow rate (0–10 L/min) on the etch rate has been investigated and correlated with the relative variation of hydrogen-atom density estimated by actinometry. By decreasing hydrogen gas flow rate, the etch rate gradually increases up to the maximum value of 11 μm/min at 2 L/min. This increase is well correlated with the increase of hydrogen-atom density due to the longer residence time of hydrogen molecules in the plasma. On the other hand, when the gas flow rate is lower than 2 L/min, the etch rate abruptly decreases with decreasing gas flow rate in spite of the increase of hydrogen-atom density. From the surface observations and Raman measurements, it is found that the decrease in etch rate in the lower flow rate range is attributed to the formation of microcrystalline Si particles due to the decomposition of generated-SiH4 molecules in the plasma.
Similar content being viewed by others
References
O’Mara WC, Herring RB, Hunt LP (1990) Handbook of semiconductor silicon technology. Noyes, New Jersey
Zulehner W (2000) Mater Sci Eng B 73:7
De Wild-Scholten M, Alsema E (2004) Refocus 5:46
Pizzini S (1982) Sol Energy Mater 6:253
Ma X, Yoshikawa T, Morita K (2012) J Alloys Compd 529:12
Pizzini S (2009) Appl Phys A 96:171
Pires JCS, Braga AFB, Mei PR (2003) Sol Energy Mater Sol Cells 79:347
Hanazawa K, Yuge N, Kato Y (2004) Mater Trans 45:844
Pires JCS, Otubo J, Braga AFB, Mei PR (2005) J Mater Process Technol 169:16
Osokin VA, Shpak PA, Ishchenko VV, Panibratskii VA, Piyuk EL (2008) Metallurgist 52:121
Jiang D, Tan Y, Shi S, Dong W, Gu Z, Guo X (2012) Vacuum 86:1417
Mei PR, Moreira SP, Cardoso E, Côrtes ADS, Marques FC (2012) Sol Energy Mater Sol Cells 98:233
Ohmi H, Kakiuchi H, Hamaoka Y, Yasutake K (2007) J Appl Phys 102:023302
Ohmi H, Goto A, Kamada D, Hamaoka Y, Kakiuchi H, Yasutake K (2009) Appl Phys Lett 95:181506
Yasutake K, Ohmi H, Kakiuchi H (2010) Mater Res Soc Symp Proc 1245:1245-A10-01
Ohmi H, Yamada T, Kakiuchi H, Yasutake K (2011) Jpn J Appl Phys 50:08JD01
Badding JV, Hemley RJ, Mao HK (1991) Science 253:421
Sandrock G, Reilly J, Graetz J, Zhou WM, Johnson J, Wegrzyn J (2005) Appl Phys A 80:687
Borchers C, Khomenko TI, Lenov AV, Morozova OS (2009) Thermochim Acta 493:80
Astashkevich SA, Käning M, Käning E, Kokina NV, Lavrov BP, Ohl A, Röpcke J (1996) J Quant Spectrosc Radiat Transf 56:725
Xiao B, Kado S, Kajita S, Yamasaki D (2004) Plasma Phys Control Fusion 46:653
Yamasaki D, Kado S, Xiao B, Iida Y, Kajita S, Tanaka S (2006) J Phys Soc Jpn 75:044501
Gicquel A, Chenevier M, Hassouni Kh, Tserepi A, Dubus M (1998) J Appl Phys 83:7504
Geng ZC, Xu Y, Yang XF, Wang WG, Zhu AM (2005) Plasma Sources Sci Technol 14:76
Coburn JW, Chen M (1980) J Appl Phys 51:3134
Lavrov BP, Pipa AV (2002) Opt Spectrosc 92:647
Chutjian A, Cartwright DC (1981) Phys Rev A 23:2178
Gicquel A, Derkaoui N, Rond C, Benedic F, Cicala G, Moneger D, Hassouni K (2012) Chem Phys 398:239
Umemoto H, Ohara K, Morita D, Nozaki Y, Masuda A, Matsumura H (2002) J Appl Phys 91:1650
Veprek S, Wang C, Veprek-Heijman MGJ (2008) J Vac Sci Technol A 26(3):313
Izumi A, Sato H, Hashioka S, Kubo M, Matsumura H (2000) Microelectron Eng 51–52:495
Chabert P, Rousseau A, Gousset G, Leprince P (1998) J Appl Phys 84:161
Abrefah J, Olander DR (1989) Surf Sci 209:291
Gates SM, Kunz RR, Greenlief CM (1989) Surf Sci 207:364
Inagaki K, Kanai R, Hirose K, Yasutake K (2011) J Nanosci Nanotechnol 11:2952
Yamada T, Ohmi H, Kakiuchi H, Yasutake K (2012) Jpn J Appl Phys 51:10NA09
Ma Y, Huang YL, Düngen W, Job R, Fahrner WR (2005) Phys Rev B 72:085321
Lengsfeld P, Nickel NH, Fuhs W (2000) J Non Cryst Solids 266–269:659
Acknowledgments
The author thanks Yasushi Oshikane for all his advices in plasma emission measurements.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yamada, T., Ohmi, H., Kakiuchi, H. et al. Effect of H2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma. Plasma Chem Plasma Process 33, 797–806 (2013). https://doi.org/10.1007/s11090-013-9461-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11090-013-9461-9