Abstract
The current work discusses the deposition of localized silicon quantum dots (SiQDs) layer on etched Si substrate by aggressive laser-assisted etching pathway. The effect of elevated laser power density of (200, 300, 400 and 500 mW/cm2) was investigated for SiQDs substrate by employing a short wavelength (530 nm) laser diode and a current density of 60 mA/cm2. The structural and photoluminescence PL properties of the localized SiQDs and the horizontally oriented Si nano pillars-like structures of the synthesized layer were studied via the analysis of (FESEM) images, (XRD) patterns and PL spectra. The achieved results revealed a simple, easy and well-organized pathway for creating localized SiQDs layer by controlling the heating effect of the elevated laser power density. The histogram of dimensions and surface density of SiQDs within the deposited layer synthesized with 400 and 500 mW/cm2 laser power density showed unique characteristics of high SiQDs surface density; owing to the maximum heat accumulation inside the laser substrate interaction area and the low tendency of probability of collapsing the dots. PL properties showed that laser power density has, specifically, modified the PL properties of the localized SiQDs by narrowing and increasing the PL intensity.
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The data sets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
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The authors gratefully acknowledge the financial and technical support provided by the Applied Sciences Department, University of technology, Baghdad-Iraq.
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Rashid, R.B., Alwan, A.M. & Mohammed, M.S. An investigation of localized silicon quantum dots deposited on etched Si substrate by aggressive laser-assisted etching pathway. Opt Quant Electron 54, 665 (2022). https://doi.org/10.1007/s11082-022-04063-2
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DOI: https://doi.org/10.1007/s11082-022-04063-2