Abstract
In this paper, a detailed theoretical analysis of the responsivity and frequency response in a strain balanced SiGeSn/GeSn multiple quantum well infrared photodetector (MQWIP) is presented. Initially, responsivity is calculated by solving continuity and rate equation at steady state considering inter well carrier transport mechanism. Transient response of the device is also derived to calculate bandwidth of the detector. Result shows that responsivity increases but bandwidth decreases with increase in number of wells. Further, responsivity bandwidth product in the MQWIP for different number of wells is also determined to study this trade-off.
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Acknowledgements
This work is partly supported by the Center of Excellence in Renewable Energy, project under MHRD, Govt. of India (F. No. 5-6/2013-TS-VII) at Indian Institute of Technology (Indian School of Mines) Dhanbad, India.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
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Pareek, P., Ranjan, R. & Das, M.K. Numerical analysis of tin incorporated group IV alloy based MQWIP. Opt Quant Electron 50, 179 (2018). https://doi.org/10.1007/s11082-018-1447-7
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DOI: https://doi.org/10.1007/s11082-018-1447-7