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An effective anti-oxidized strategy for ultra-narrow band absorber as plasmonic sensor

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Abstract

An effective strategy to avoid the Ag oxidized problem of the ultra-narrow band grating absorbers as sensors was proposed and demonstrated theoretically by introducing a thin Al2O3 layer above the upmost Ag grating layer. We theoretically and numerically study the influence of the Al2O3 layer on the plasmoinc absorbers. The resonant wavelength of the sensor is easily tunable via geometrical scaling of the Ag grate structure and thickness of the Al2O3 layer. The introduced Al2O3 layer does not influence the underlying mechanism of the ultra-narrow absorber, so it remains the high sensitivity of the Ag-based plasmonic absorbers by keeping the sensitivity 507 nm/RIU and FOM about 160. The introduced anti-oxidized layer is an effective and harmless anti-oxidized strategy, which has great potential to improve the performance of sensors in practical applications.

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Acknowledgements

The authors thank Jun Yin for helpful discussion and technical supporting. This work was funded by National Natural Science Foundation of China (Nos. 61504078), China Postdoctoral Science Foundation (Nos. 2015M571545) and National Natural Science Foundation of China (Nos. 61303099).

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Authors and Affiliations

  1. College of Information Engineering, Shanghai Maritime University, Shanghai, 201306, China

    Yulian Li, Bowen An, Shengming Jiang, Jun Gao & Xuejia Lu

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  1. Yulian Li
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  2. Bowen An
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  3. Shengming Jiang
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  4. Jun Gao
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  5. Xuejia Lu
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Correspondence to Yulian Li.

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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices 2016.

Guest edited by Yuh-Renn Wu, Weida Hu, Slawomir Sujecki, Silvano Donati, Matthias Auf der Maur and Mohamed Swillam.

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Li, Y., An, B., Jiang, S. et al. An effective anti-oxidized strategy for ultra-narrow band absorber as plasmonic sensor. Opt Quant Electron 48, 530 (2016). https://doi.org/10.1007/s11082-016-0798-1

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