Abstract
Current–voltage characteristics of HgCdTe photodiodes in the forward bias region have been modeled considering mechanisms including drift-diffusion current, recombination current, metal-semiconductor contact and constant series resistance. Moreover, a fitting method based on the genetic algorithm has been developed to obtain values of related physical parameters from the measured dynamic resistance–voltage curves. Fitting results of \(n^+\)-on-\(p\) planar devices with different cutoff wavelengths are presented to illustrate the model and method, which are available and promising in acquiring device parameter values and evaluating the electrode contact quality.
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Y. Li thanks B. S. Cui, H. Hua and K. He in Shanghai Institute of Technical Physics for helpful discussions.
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Li, Y., Ye, ZH., Lin, C. et al. Parameter determination from current–voltage characteristics of HgCdTe photodiodes in forward bias region. Opt Quant Electron 45, 641–648 (2013). https://doi.org/10.1007/s11082-012-9642-4
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DOI: https://doi.org/10.1007/s11082-012-9642-4