Abstract
We report on 2D numerical simulations of laser beam induced current (LBIC) for HgCdTe photovoltaic detector. The effect of junction leakage current on LBIC signal is investigated, and different leakage paths caused by different reasons in HgCdTe photodiode arrays are taken into account in the simulation. The simulation results are in good agreement with the experiment data. Simulation results suggest that LBIC can be used to determine the existence of junction leakage current and investigate the origin of junction leakage current.
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Yin, F., Hu, W.D., Zhang, B. et al. Simulation of laser beam induced current for HgCdTe photodiodes with leakage current. Opt Quant Electron 41, 805–810 (2009). https://doi.org/10.1007/s11082-010-9394-y
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DOI: https://doi.org/10.1007/s11082-010-9394-y