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Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation

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Abstract

We synthesized Si nanoparticles by pulsed nanosecond-laser ablation. We applied a positive voltage bias during laser irradiation and effectively reduced size distribution. Scanning electron micrographs of samples showed the nanoparticles to be highly non-agglomerated. Si nanoparticles have the average diameter of 4–5 nm, the geometrical standard deviation of 1.35, and the density of 1.6 × 1012/cm2. A MOS device showed excellent charge trap behavior with a flat-band voltage shift over 7 V, which can be applied for memory device applications.

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Notes

  1. In this study, nanoparticle size dispersion is measured by σg instead of standard deviation, σ. Nanoparticle size often shows the log-normal distribution because coagulation has characteristics similar to the random walk process which has a normal distribution on an exponential scale.

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Authors and Affiliations

  1. Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, 446-711, Korea

    Yoonho Khang

  2. Samsung Advanced Institute of Technology, Yongin, 446-712, Korea

    Joohyun Lee

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  1. Yoonho Khang
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  2. Joohyun Lee
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Correspondence to Yoonho Khang.

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Khang, Y., Lee, J. Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation. J Nanopart Res 12, 1349–1354 (2010). https://doi.org/10.1007/s11051-009-9669-z

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