Abstract
Non stoichiometric SnO2 nanoparticles form an important class of materials which is a wide gap (̴ 3.64 eV), transparent, n-type semiconductor. It has a wide range of applications in the field of optics, electronics and catalysis. In this review article some reports on structural, electrical and optical aspects of these materials (pure and doped) have been discussed in detail. Results from XRD, SEM, TEM, and electron diffraction patterns have shown the structural features of these SnO2 nanoparticles. Electrical properties have been discussed with respect to carrier concentration and carrier mobility that ultimately effects the conductance in these materials. Particle size also play an important role. Optical properties are determined by direct energy band gap between conduction and valence band. Results from UV-vis spectroscopy (absorption, reflectance and transmittance) show the actual band gap in these materials. Direct measurement of the bad gap (Eg) from the intercept of the energy axis in Tauc Plots, show its dependence on the type of dopant and its concentration and also on particle size.
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Acknowledgements
Financial support from UGC, New Delhi (F. MS-37/304004/XII/13-14/CRO dated 19 January 2015) is highly acknowledged. Special thanks and acknowledgement goes to the contributing authors of the research papers for making this review article more informative and explanatory with the help of figures provided by them.
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Sharma, V. An insight into the structural, electrical and optical properties of SnO 2 nanoparticles. J Sol-Gel Sci Technol 84, 231–238 (2017). https://doi.org/10.1007/s10971-017-4507-8
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DOI: https://doi.org/10.1007/s10971-017-4507-8