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Fabrication of Schottky diode based on Zn electrode and polyaniline doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt

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Abstract

The electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, of ITO/polyaniline/Al and ITO/polyaniline/Zn Schottky diodes have been investigated. Polyaniline (PANI) was prepared chemically and doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt (AMPSNa). The maximum conductivity value for PANI-AMPSNa films was 1.8 × 10−2 S/cm at 0.5 weight ratio of AMPSNa. The values of various junction parameters such as ideality factor, barrier height and charge carrier concentration were calculated based on the thermionic emission theory. Zn electrode showed better rectifying behavior with PANI-AMPSNa film than Al electrode. The obtained C-V characteristics showed that the charge carrier concentration is in the range of 1016/cm3.

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Authors and Affiliations

  1. Department of Materials Science, Institute of Graduate Studies and Research, Alexandria University, 163 Horrya Avenue, El-Shatby, Postal Code 21526, Alexandria, Egypt

    Shaker Mabrouk Ebrahim

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  1. Shaker Mabrouk Ebrahim
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Correspondence to Shaker Mabrouk Ebrahim.

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Ebrahim, S.M. Fabrication of Schottky diode based on Zn electrode and polyaniline doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt. J Polym Res 16, 481–487 (2009). https://doi.org/10.1007/s10965-008-9251-x

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  • DOI: https://doi.org/10.1007/s10965-008-9251-x

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