Abstract
We deposited epi-MgO films on the textured ion beam assisted deposition (IBAD)-MgO substrates by RF magnetic sputtering at different substrate temperatures (600–850 °C), RF powers (110–224 W) and oxygen partial pressures (19.5–58.6 mTorr). The microstructure and surface morphology of epi-MgO films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). It was found that epi-MgO films with c-axis orientation could be easily fabricated for broad parameter ranges. But the in-plane full width half maximum (FWHM) of the epi-MgO film was dependent on the parameters, and the epi-MgO film with the smallest FWHM value of 5.22° was obtained at the optimum parameters. What’s more, the GdBa2Cu3O7 films deposited on the epi-MgO/IBAD-MgO substrate by RF magnetic sputtering showed c-axis orientation.
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Acknowledgements
This research was sponsored by the Ministry of Science and Technology of China (under 863 Project Grant No. 2009AA032402), the Youth Fund of Natural Science Foundation of China (Grant No. 11204174), the International Thermonuclear Experiment Reactor (ITER) Plan (Grant No. 2011GB113004) and the Shanghai Science and Technology Committee (Grant No. 09DZ206000 and 11DZ1100402).
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Luo, Q., Liu, L., Xiao, G. et al. Preparation of Epitaxial MgO Films Deposited by RF Magnetic Sputtering on the IBAD-MgO Substrate. J Supercond Nov Magn 27, 1419–1424 (2014). https://doi.org/10.1007/s10948-014-2493-4
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DOI: https://doi.org/10.1007/s10948-014-2493-4