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Deposition of ZnO thin films on Si by RF magnetron sputtering with various substrate temperatures

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Abstract

Undoped ZnO thin films were successfully deposited on Si substrates by RF magnetron sputtering with different substrate temperatures. The dependence was systematically investigated the structural, morphology, chemical state and optical properties of ZnO thin films. Crystal quality, growth orientation and optical properties of ZnO thin films were improved at proper substrate temperature (450 °C) whereas were deteriorated at higher temperature (600 °C). X-ray photoelectron spectroscopy showed that proper substrate temperature promoted the formation of Zn–O bonding, resulting in an improvement of film quality, while higher temperature decreased the formation of the Zn–O bonding and increased the oxygen vacancy due to formation of an amorphous SiO2 layer at the interface of ZnO and Si, resulting in a degradation of film quality. Moreover, the amorphous SiO2 layer is formed by oxygen related to the Zn–O bonding, mainly. Therefore, the experimental results indicate that the substrate temperature plays an important role in the deposition of ZnO film on Si substrate and needs to be carefully selected to suppress a formation of an amorphous SiO2 layer.

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References

  1. S.L. Ou, D.S. Wuu, S.P. Liu, Y.C. Fu, S.C. Huang, R.H. Horng, Opt. Express 19, 16244 (2011)

    Article  Google Scholar 

  2. H.H. Li, P.Y. Yang, S.M. Chiou, H.W. Liu, H.C. Cheng, IEEE Electron Device Lett. 32, 928 (2011)

  3. X. Zou, G. Fang, J. Wan, N. Liu, H. Long, H. Wang, X.Z. Zhao, Semicond. Sci. Technol. 26, 055003 (2011)

    Article  Google Scholar 

  4. Y.Y. Chen, J.R. Yanga, S.L. Cheng, M. Shiojiri, Thin Solid Films 545, 183 (2013)

    Article  Google Scholar 

  5. M. Jung, J. Lee, S. Park, H. Kim, J. Chang, J. Cryst. Growth 283, 384 (2005)

    Article  Google Scholar 

  6. H. Chen, J. Ding, W. Guo, Ceram. Int. 40, 4847 (2014)

    Article  Google Scholar 

  7. J.J. Ding, H.X. Chen, S.Y. Ma, Physica E 42, 1861 (2010)

    Article  Google Scholar 

  8. J. Zhai, L. Zhang, X. Yao, Ceram. Int. 26, 883 (2000)

    Article  Google Scholar 

  9. Z. Zhang, C. Bao, W. Yao, S. Ma, L. Zhang, S. Hou, Superlattices Microstruct. 49, 644 (2011)

    Article  Google Scholar 

  10. B. Houng, H.B. Chen, Ceram. Int. 38, 801 (2012)

    Article  Google Scholar 

  11. J. Mass, P. Bhattacharya, R.S. Katiyar, Mater. Sci. Eng. B 103, 9 (2003)

    Article  Google Scholar 

  12. R. Ondo-Ndong, G. Ferblantier, MAl Kalfioui, A. Boyer, A. Foucaran, J. Cryst. Growth 255, 130 (2003)

    Article  Google Scholar 

  13. B.D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, 1978), p. 102

    Google Scholar 

  14. A.A. Lotin, O.A. Novodvorsky, D.A. Zuev, O.D. Khramova, L.S. Parshina, F.V. Lebedev, J.W. Bartha, C. Wenzel, Opt. Mater. 35, 1564 (2013)

    Article  Google Scholar 

  15. C.H. Ahn, S.Y. Lee, H.K. Cho, Thin Solid Films 545, 106 (2013)

    Article  Google Scholar 

  16. K. Maejima, T. Koida, H. Sai, T. Matsui, K. Sato, M. Kondo, T. Takagawa, Thin Solid Films 559, 83 (2014)

    Article  Google Scholar 

  17. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, G.E. Muilenberg, Handbook of X-ray Photoelectron Spectoscopy (Eden Prairie, Mn, PerkinElmer Corporatio, 1979), pp. 50–51

    Google Scholar 

  18. V.I. Nefedov, M.N. Firsov, I.S. Shaplygin, J. Electron Spectrosc. Relat. Phenom. 26, 65 (1982)

    Article  Google Scholar 

  19. J.C. Fan, J.B. Goodenough, J. Appl. Phys. 48, 3524 (1977)

    Article  Google Scholar 

  20. S.-S. Lin, J.-L. Huang, P. Sajgalik, Surf. Coat. Technol. 190, 39 (2005)

    Article  Google Scholar 

  21. V. Senthilkumar, P. Vickraman, M. Jayachandran, C. Sanjeeviraja, Vacuum 84, 864 (2010)

    Article  Google Scholar 

  22. J. Tauc, Mater. Res. Bull. 5, 721 (1970)

    Article  Google Scholar 

  23. L. Burstein, Phys. Rev. 93, 632 (1954)

    Article  Google Scholar 

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Acknowledgments

This paper was supported by Wonkwang University in 2014.

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Authors and Affiliations

  1. Advanced Development Team, Samsung Electronics Co. Ltd., Yongin, Gyeonggi, 446-711, Korea

    Deok-Kyu Kim

  2. Department of Information and Communication Engineering, Wonkwang University, Iksan, Jeonbuk, 570-749, Korea

    Choon-Bae Park

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  1. Deok-Kyu Kim
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  2. Choon-Bae Park
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Correspondence to Choon-Bae Park.

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Kim, DK., Park, CB. Deposition of ZnO thin films on Si by RF magnetron sputtering with various substrate temperatures. J Mater Sci: Mater Electron 25, 5416–5421 (2014). https://doi.org/10.1007/s10854-014-2322-3

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  • DOI: https://doi.org/10.1007/s10854-014-2322-3

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