Abstract
In this paper, 0.5Bi4Ti3O12–0.5BiFe0.98Mn0.02O3 (BTBF) films were prepared on FTO/glass substrates using the sol-gel method. The impacts of BTBF films on the grain structure, defect density, electrical properties and ageing properties were studied under air, oxygen and nitrogen-annealing atmospheres. X-ray diffraction (XRD) results demonstrate that the ferroelectric materials formed by the combination of Bi4Ti3O12 (BIT) and BiFe0.98Mn0.02O3 (BFMO) in the form of a solid solution show a bismuth-layered perovskite structure. X-ray photoelectron spectroscopy (XPS) shows that samples annealed under an O2 atmosphere have higher Fe3+: Fe2+ ratios and fewer oxygen vacancy defects. Meanwhile, the samples annealed under an O2 atmosphere show better ferroelectric properties (2Pr ≈ 22.0 µC/cm2) and a lower leakage current density (J ≈ 7.09 × 10− 6 A/cm2). In addition, the annealing atmosphere is also found to affect the light absorption performance of the samples, and the samples annealed under a N2 atmosphere show a smaller band gap and better light absorption performance. Finally, the ageing phenomenon for the samples is analysed, and the volumetric effect ageing mechanism is discussed.
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Acknowledgements
This work was supported by Shandong Provincial Natural Science Fund (ZR2022ME071), the Program of the Housing and Urban-Rural Construction Department of Shandong Province (2019-K7-10) and State Key Laboratory of Silicate Materials for Architectures (Wuhan University of Technology) (SYSJJ2020-05).
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YL: prepared the BTBF films and performed all measurements. FQZ and JL: supervised the experiments and suggested changes to the paper. YYW, GDW, BDY and JXH: contributed to the revision of the manuscript and collation of experimental data. All authors discussed the results and commented on the manuscript. All authors have given approval to the final version of the manuscript.
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Liu, Y., Wang, Y., Wang, G. et al. Structure and properties of 0.5Bi4Ti3O12-0.5BiFe0.98Mn0.02O3 films under different annealing atmospheres. J Mater Sci: Mater Electron 34, 364 (2023). https://doi.org/10.1007/s10854-022-09735-z
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DOI: https://doi.org/10.1007/s10854-022-09735-z