Abstract
In this study, two new chitin derivatives were firstly synthesized. The products formed as a result of the reactions between chitin with 4-bromo-1,8-naphthalic anhydride and 4,4′-oxydiphthalic anhydride were abbreviated as C4B18NA and C44′OA, respectively. The structures of the chitin derivatives were illuminated by various spectroscopic methods (FTIR, NMR, and XRD), and it was thus confirmed that they were synthesized. The surface structures of the chitin derivatives were investigated by SEM technique. Then, two separate diodes were made using aluminum as metal, the chitin derivatives as interfacial layer, and p-Si as semiconductor. Some important properties of the diodes made were determined both in the dark and under an illumination of 100 mW/cm2. It was seen that the diodes are more ideal than most of the diodes where aluminum and p-type silicon were used as metal and semiconductor in their structures, respectively.
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This study was financially supported by DÜBAP with a project with number ZGEF.17.021.
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Uzun, İ., Orak, İ., Karakaplan, M. et al. Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives. J Mater Sci: Mater Electron 31, 20090–20100 (2020). https://doi.org/10.1007/s10854-020-04530-0
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DOI: https://doi.org/10.1007/s10854-020-04530-0