Abstract
B-doped ZnO thin films have been synthesized by a sol–gel dip-coating deposition technique. Deposition conditions were optimized to achieve highly ordered thin films. XRD patterns confirm that B ions are inserted into the ZnO; lattice and the crystallite size decrease from 25.83 to 20.94 nm as the amount of B increases to optimal value (9 at.wt%). Synthesized B-doped ZnO thin films have ordered hexagonal wurtzite structures and granular morphology with high specific surface area. Optical transmittance spectra display transparency in the visible region. The band gap of the films decreases from 3.89 to 3.04 eV with the increase in B concentration. Band gap lowering is due to increase of defect level with the increase in B dopant percentage. The origin of the ferromagnetism is explained in terms of oxygen vacancies and Zn interstitials. Dielectric constant increases while DC conductivity and AC conductivity decrease with the increase in B doping. Antibacterial activity increases with the increase in B doping percentage but lower than undoped ZnO due to large crystallite size of B-doped ZnO nanostructures.
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Kayani, Z.N., Bashir, Z., Riaz, S. et al. Transparent boron-doped zinc oxide films for antibacterial and magnetic applications. J Mater Sci: Mater Electron 31, 11911–11926 (2020). https://doi.org/10.1007/s10854-020-03745-5
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DOI: https://doi.org/10.1007/s10854-020-03745-5