Abstract
Transparent conducting B-doped ZnO thin films were deposited on normal soda-lime glass substrate by pulsed DC magnetron sputtering from homemade Zn1−x B x O ceramic targets. All the Zn1−x B x O targets are single-phase hexagonal wurtzite structure. After introducing B dopant into ZnO, the targets have a slight c-axis orientation and show more compact than the undoped target. The effect of B doping concentration on the crystallization behaviors, morphological, electrical, and optical properties of the Zn1−x B x O films was systematically investigated. XRD patterns reveal that both the B-doped and undoped films exhibit hexagonal wurtzite structure with strong c-axis orientation. With increasing the B doping concentration, the c-axis orientation and the calculated grain size of the Zn1−x B x O films based on the XRD data decrease. The surface morphologies of the films are very flat, and the transmittance spectra of the films show mean values higher than 90% in the visible range. The B-doped ZnO film with the lowest resistivity of 2.1 × 10−3 Ω cm was achieved by sputtering the Zn0.99B0.01O ceramic target.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant Nos. 51302024 and 51002018), Program for Liaoning Excellent Talents in University (Grant No. LJQ2012038), Natural Science Foundation of Liaoning Province, China (Grant Nos. 2015020653, 2015020191 and 2015020182), and Key Laboratory of Functional Materials Physics and Chemistry (Jilin Normal University), Ministry of Education, China (No. 2015005).
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Wen, B., Liu, C.Q., Wang, N. et al. Properties of transparent conductive boron-doped ZnO thin films deposited by pulsed DC magnetron sputtering from Zn1−x B x O targets. Appl. Phys. A 123, 211 (2017). https://doi.org/10.1007/s00339-017-0847-z
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DOI: https://doi.org/10.1007/s00339-017-0847-z