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Resistive switching memory utilizing water and titanium dioxide thin film Schottky diode

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Abstract

Colorless and odorless water is an important liquid element to all life on earth. In this paper, a novel resistive switching device is presented by applying a water (H2O) on titanium dioxide (TiO2) thin film based Schottky diode. The Ag electrodes are fabricated with screen printer and the TiO2 film are fabricated through a spin coater. The polydimethylsiloxane mold with holes is engineered to lock water. Applying dual voltage sweep of ± 5 V, it exhibits high resistance state of 120.6 kΩ and low resistance state of 9.4 kΩ with 100 endurance cycles, and it is stably and consistently operated for long retention tome of 104 s with Roff/Ron ratio of 12.82. From the results, we can say that liquid based materials can be used to fabricate resistive memory devices.

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Acknowledgements

This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) (2016R1A2B4015627 and 2019R1H1A2086726).

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Authors and Affiliations

  1. Department of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju, 63243, South Korea

    Muhammad Umair Khan, Gul Hassan & Jinho Bae

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  1. Muhammad Umair Khan
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  2. Gul Hassan
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  3. Jinho Bae
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Correspondence to Jinho Bae.

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Khan, M.U., Hassan, G. & Bae, J. Resistive switching memory utilizing water and titanium dioxide thin film Schottky diode. J Mater Sci: Mater Electron 30, 18744–18752 (2019). https://doi.org/10.1007/s10854-019-02227-7

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  • DOI: https://doi.org/10.1007/s10854-019-02227-7

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