Abstract
Transparent thin films based on nanocomposites of BaTiO3, (PMMA) and poly (4-vinylphenol) (PVP) are synthesized and deposited on fluorine doped tin oxide (FTO) coated glass substrate by spin coating technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) are applied to investigate the chemical bonds and structural properties of the samples. The optical transmittance and reflectance of nanocomposite films are investigated in the 200–900 nm wavelength range. The calculation of optical band gaps of thin films showed that the thin film has directly allowed transition with the values from 3.3 eV to 3.4 eV. Dispersion parameters are calculated based on the single oscillator model. The important parameters such as dispersion energy, oscillator energy and lattice dielectric constant are extracted for thin film. The electrical properties such as capacitance and electrical behavior are investigated for sample. The obtained results of nanocomposite thin films can be useful for using in transparent organic thin film transistor.
Similar content being viewed by others
References
J.H. Na, M. Kitamura, Y. Arakawa, Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors. Thin Solid Films 517(6), 2079–2082 (2009)
H. Chen et al., Highly pi-extended copolymers with diketopyrrolopyrrole moieties for high-performance field-effect transistors. Adv. Mater. 24(34), 4618–4622 (2012)
J.W. Jung et al., A high mobility conjugated polymer based on dithienothiophene and diketopyrrolopyrrole for organic photovoltaics. Energy Environ. Sci. 5(5), 6857–6861 (2012)
J.A. Jiménez Tejada et al., Contact effects in compact models of organic thin film transistors: application to zinc phthalocyanine-based transistors. Org. Electron. 12(5), 832–842 (2011)
Y. Fujisaki et al., Transparent nanopaper-based flexible organic thin-film transistor array. Adv. Func. Mater. 24(12), 1657–1663 (2014)
K. Amer et al., Fabrication, characterization, and electrical measurements of gas ammonia sensor based on organic field effect transistor. J. Mater. Sci. 30(1), 391–400 (2019)
L. Zhang et al., Low-temperature solution-processed alumina dielectric films for low-voltage organic thin film transistors. J. Mater. Sci. 26(9), 6639–6646 (2015)
M. Shahbazi, A. Bahari, S. Ghasemi, Structural and frequency-dependent dielectric properties of PVP–SiO 2–TMSPM hybrid thin films. Org. Electron. 32, 100–108 (2016)
M.D. Morales-Acosta, M.A. Quevedo-López, R. Ramírez-Bon, PMMA–SiO2 hybrid films as gate dielectric for ZnO based thin-film transistors. Mater. Chem. Phys. 146(3), 380–388 (2014)
S. Demirezen, Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature. Appl. Phys. A 112(4), 827–833 (2013)
S. Lee et al., Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance. Appl. Phys. Lett. 88(16), 162109 (2006)
C.C. Shih et al., High performance transparent transistor memory devices using nano-floating gate of polymer/ZnO nanocomposites. Sci. Rep. 6, 20129 (2016)
J. Kim et al., Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures. Adv. Mater. 27(21), 3292–3297 (2015)
V. Benfenati et al., A transparent organic transistor structure for bidirectional stimulation and recording of primary neurons. Nat. Mater. 12(7), 672–680 (2013)
T. Georgiou et al., Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8(2), 100–103 (2013)
T.Q. Trung et al., Flexible and transparent nanocomposite of reduced graphene oxide and P(VDF-TrFE) copolymer for high thermal responsivity in a field-effect transistor. Adv. Func. Mater. 24(22), 3438–3445 (2014)
T. Marszalek et al., Transparent and air stable organic field effect transistors with ordered layers of dibenzo[d,d]thieno[3,2-b;4,5-b0]dithiophene obtained from solution. Opt. Mater. 34, 1660–1663 (2012)
Y. Yu et al., Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors. Appl. Phys. Lett.. 109(19), 193505 (2016)
P.-K. Yang et al., Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects. Proc. IEEE, 101(7), 1732–1739 (2013)
I. Isakov et al., Exploring the leidenfrost effect for the deposition of high-Quality In2O3 layers via spray pyrolysis at low temperatures and their application in high electron mobility transistors. Adv. Funct. Mater. 27(22), 1606407 (2017)
P. Firek, A. Werbowy, J. Szmidt, MIS field effect transistor with barium titanate thin film as a gate insulator. Mater. Sci. Eng. 165(1–2), 126–128 (2009)
C. Dagdeviren et al., Transient, biocompatible electronics and energy harvesters based on ZnO. Small 9(20), 3398–3404 (2013)
E.N. Dattoli et al., Fully transparent thin-film transistor devices based on SnO2 nanowires. Nano Lett. 7(8), 2463–2469 (2007)
H. Najafi–Ashtiani, Performance evaluation of free-silicon organic-inorganic hybrid (SiO2-TiO2PVP) thin films as a gate dielectric. Appl. Surf. Sci. 455, 373–378 (2018)
Jhih-Jie, Huang et al., Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen. Appl. Surf. Sci. 305, 214–220 (2014)
A. Kumar, S. Mondal, K.S.R.K. Rao, Low temperature solution processed high-k ZrO2 gate dielectrics for nanoelectonics. Appl. Surf. Sci. 370, 373–379 (2015)
H.-W. Park et al., Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing. Appl. Surf. Sci. 321, 520–524 (2014)
Davoud Dastan, A. Banpurkar, Solution processable sol–gel derived titania gate dielectric for organic field effect transistors. J. Mater. Sci. 28(4), 3851–3859 (2017)
H.K. Li et al., A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure. J. Appl. Phys. 119(24), 244505 (2016)
C.-Y. Wei et al., High-mobility pentacene-based thin-film transistors with a solution-processed barium titanate insulator. IEEE Electron Device Lett. 32(1), 90–92 (2011)
T.W. Kim et al., High-frequency characteristics of L g = 60 nm InGaAs MOS high-electron-mobility-transistor (MOS-HEMT) with Al2O3 gate insulator. Electron. Lett. 52(10), 870–872 (2016)
M.J. Tadjer et al., Communication—A (001) β-Ga2O3MOSFET with + 2.9 V threshold voltage and HfO2Gate dielectric. ECS J. Solid State Sci. Technol. 5(9), P468–P470 (2016)
Y.Y. Yu, A.H. Jiang, W.Y. Lee, Organic/inorganic nano-hybrids with high dielectric constant for organic thin film transistor applications. Nanoscale Res. Lett. 11(1), 488 (2016)
D.E. Martinez-Tong et al., Structural evolution of an organic semiconducting molecule onto a soft substrate. Chemphyschem 17(8), 1174–1179 (2016)
J. Meza-Arroyo et al., Low temperature processing of Al2O3–GPTMS–PMMA hybrid films with applications to high-performance ZnO thin-film transistors. Appl. Surf. Sci. 467–468, 456–461 (2019)
H. Najafi-Ashtiani et al., Structural, optical and electrical properties of WO3–Ag nanocomposites for the electro-optical devices. Appl. Phys. A 124(1), 24 (2017)
J. Dong et al., Effect of Al doping on performance of ZnO thin film transistors. Appl. Surf. Sci. 433, 836–839 (2018)
W. Yu et al., Titanium doped zinc oxide thin film transistors fabricated by cosputtering technique. Appl. Surf. Sci. 459, 345–348 (2018)
H. Najafi-Ashtiani, A. Bahari, Optical and cyclic voltammetry behavior studies on nanocomposite film of copolymer and WO3 grown by electropolymerization. Synth. Met. 217, 19–28 (2016)
H. Najafi-Ashtiani, A. Bahari, Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o -toluidine and WO 3. Opt. Mater. 58, 210–218 (2016)
Acknowledgements
The author would like to acknowledge the financial support of Velayat University for this research under Grant Number T-97-16.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Najafi-Ashtiani, H. Low temperature processing of BaTiO3-PMMA-PVP hybrid films as transparent dielectric gate. J Mater Sci: Mater Electron 30, 7087–7094 (2019). https://doi.org/10.1007/s10854-019-01025-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-01025-5