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Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure

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Abstract

In this paper, the polyvinyl pyrrolidine (PVP) polymer layer doped by barium titanate (BaTiO3) nanostructures has been prepared as an interfacial layer to fabricate a metal-semiconductor-metal (MPS) diode. The inserted layer in the metal-semiconductor (MS) structure can be changed its dielectric properties which have been studied in this work. In addition, the frequency-dependent impedance measurements are performed at 1.5 V in frequency range 100 Hz-1 MHz. The variations of the dielectric constant (ε′)/loss (ε′′), electrical modules, and ac electrical conductivity σac of them are investigated. It is found that the use of interfacial layer increases dielectric constant of the MPS five times more than MS. Also, PVP: BaTiO3 interlayer increases the electrical conductivity by decreasing the interfacial polarization. The results show that the conduction mechanisms are charge carrier’s interaction and trap states at the low/intermediate frequency and well-localized relaxation process at the high frequency. Therefore, PVP: BaTiO3 interlayer can be a suitable alternative replacement of intrinsic interlayer for utilization in the nanoscale electronic and optoelectronic devices and circuits.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Funding

This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019–26).

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Authors and Affiliations

  1. Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran

    Ali Barkhordari & Hamid Reza Mashayekhi

  2. Department of Photonics, Faculty of Applied Sciences, Gazi University, 06500, Ankara, Turkey

    Süleyman Özçelik & Yashar Azizian-Kalandaragh

  3. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    Süleyman Özçelik & Yashar Azizian-Kalandaragh

  4. Department of Engineering Sciences, Faculty of Advanced Technologies, Sabalan University of Advanced Technologies (SUAT), Namin, Iran

    Gholamreza Pirgholi-Givi

  5. Department of Engineering Sciences, Faculty of Advanced Technologies, University of Mohaghegh Ardabili, Namin, Iran

    Gholamreza Pirgholi-Givi

  6. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey

    Şemsettin Altındal

Authors
  1. Ali Barkhordari
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  2. Süleyman Özçelik
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  3. Gholamreza Pirgholi-Givi
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  4. Hamid Reza Mashayekhi
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  5. Şemsettin Altındal
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  6. Yashar Azizian-Kalandaragh
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Contributions

The author contribution of this article contribute is as follows: Ali Barkhordari, Experiments, Data analyses and graphs, writing; Süleyman Özçelik, Discussion, Writing and editing; Gholamreza Pirgholi-Givi, Experiments, Analyses of the samples, Discussion; Hamid Reza Mashayekhi, Writing, editing and interpretation of electrical properties; Şemsettin Altındal, Writing, editing and interpretation of electrical properties; Yashar Azizian-Kalandaragh, Idea, experimental section, editing and discussion.

Corresponding author

Correspondence to Yashar Azizian-Kalandaragh.

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Barkhordari, A., Özçelik, S., Pirgholi-Givi, G. et al. Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure. Silicon 14, 5437–5443 (2022). https://doi.org/10.1007/s12633-021-01196-z

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  • DOI: https://doi.org/10.1007/s12633-021-01196-z

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