Abstract
The anisotropy of β-Sn grain can significantly affect the electromigration (EM) behavior in Sn3.0Ag0.5Cu (SAC305) solder interconnects. A real ball grid array (BGA) specimen with a cross sectioned edge row suffered electromigration for 600 h to investigate the effects of β-Sn c-axis on the behavior of electromigration in SAC305 solder interconnects. Scanning electron microscopy (SEM) and electron backscattered diffraction (EBSD) were used to obtain the microstructure and orientation of β-Sn grains in as-reflowed and low current density conditions. Besides, the orientation of c-axis had a great effect on the growth direction of IMCs in solder matrix. The solder interconnect with the Sn grain c-axis pointing the positive direction of ND would emerge serious electromigration phenomena. The density of Cu6Sn5 IMCs distributing at the surface of solder matrix increased obviously. However, when Sn grain c-axis was in the same direction with the opposite direction of ND, the original Cu6Sn5 IMCs in as-reflowed solder interconnect disappeared. Therefore, the results show that the solder interconnects will performance a different electromigration behavior due to the direction of c-axis in Sn grain: the growth direction of Cu6Sn5 IMCs in solder matrix will along the c-axis accompanied growing into solder matrix or gathering at the surface of the cross section.
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Acknowledgements
The authors acknowledge the support of this work from National Natural Science Foundation (Grant Number 51401006), the Beijing Natural Science Foundation (Grant Numbers 2162005 and 2172009) and the Science and Technology Project of Beijing Municipal Education Commission (Grant Number KM201710005003).
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Tian, Y., Han, J. & Guo, F. Effects of β-Sn grain c-axis on electromigration behavior in BGA Sn3.0Ag0.5Cu solder interconnects. J Mater Sci: Mater Electron 28, 10785–10793 (2017). https://doi.org/10.1007/s10854-017-6952-0
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DOI: https://doi.org/10.1007/s10854-017-6952-0