Abstract
Polyimide(PI)/Cu composite thick films are widely used in wafer level packaging (WLP), and a common problem is the defects such as void, delamination, crack or wafer warpage induced by thermal stress. Compared with traditional rigid substrate/Cu/passivation system, PI imposes quite a different boundary constraint on Cu, resulting in a special stress evolution, and the corresponding mechanism is far from fully understood. Five sets of composites are constructed to investigate the influence of PI on thermal stress evolution in Cu film by means of in situ wafer warpage measurement under thermal cycling. Together with finite element analyses, it’s counterintuitive to find that although PI indeed reduces the stress in Cu, it exacerbates overall wafer warpage at room temperature. Warpage evolution reveals that composites consisting of substrate/PI/Cu sustains a moderate compressive stress while bare PI film is totally stress relaxed at high temperature, indicating that Cu and PI restrains stress relaxation reciprocally. It suggests that mutual effect should be considered when evaluating the stress distribution in polymer-metal composite thick films.
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This work was supported by National Natural Science Foundation of China (Grant Number NSFC61574154) and Natural Science Foundation of Shanghai (No. 13ZR1447300).
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Li, H., Cheng, G., Xu, G. et al. Influence of polyimide on thermal stress evolution in polyimide/Cu thick film composite. J Mater Sci: Mater Electron 27, 8325–8331 (2016). https://doi.org/10.1007/s10854-016-4841-6
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DOI: https://doi.org/10.1007/s10854-016-4841-6