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Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric

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Abstract

The undoped and cerium-doped hafnium oxide (HfO2) thin films have been deposited on p-type single crystal Si(100) substrates using radio frequency magnetron sputtering method. The structure and electrical properties have been investigated as a function of doping concentration. The results show that cerium serves effectively as a dopant to induce the crystallographic change from the monoclinic to the cubic phase. The ceium-doped HfO2 shows higher dielectric constant than undoped HfO2. The dielectric constant enhancement can be explained by the shrinkage of molar volume and the increase of molar polarizability. Compared with undoped HfO2, the cerium-doped HfO2 exhibits a lower leakage current due to the decrease of the oxygen vacancies number.

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References

  1. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 87, 484 (2000)

    Article  Google Scholar 

  2. Y.K. Lu, X.F. Chen, W. Zhu, R. Gopalkrishnan, J. Mater. Sci.: Mater. Electron. 17, 685 (2006)

    Google Scholar 

  3. S. Van Elshocht, C. Adelmann, T. Conard, A. Delabie, A. Franquet, L. Nyns, O. Richard, P. Lehnen, J. Swerts, S. De Gendt, J. Vac. Sci. Technol. A 26, 724 (2008)

    Article  Google Scholar 

  4. H.K. Tyagi, P.J. George, J. Mater. Sci.: Mater. Electron. 19, 902 (2008)

    Google Scholar 

  5. K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, D.C. Gilmer, R. Hegde, R. Rai, L. Prabhu, J. Mater. Sci.: Mater. Electron. 14, 361 (2003)

    Google Scholar 

  6. J.H. Choi, Y. Mao, J.P. Chang, Mater. Sci. Eng. R 72, 97 (2011)

    Article  Google Scholar 

  7. J.M. Hergenrother, G.D. Wilk, T. Nigam, F.P. Klemens, D. Monroe, P.J. Silverman, T.W. Sorsch, B. Busch, M.L. Green, M.R. Baker, T. Boone, M.K. Bude, N.A. Ciampa, E.J. Ferry, A.T. Fiory, S.J. Hillenius, D.C. Jacobson, R.W. Johnson, P. Kalavade, R.C. Keller, C.A. King, A. Komblit, H.W. Krautter, J.T.-C. Lee, W.M. Mansfield, J.F. Miner, M.D. Morris, S.-H. Oh, J.M. Rosamilia, B.J. Sapjeta, K. Short, K. Steiner, M. Hill, D.A. Muller, P.M. Voyles, J.L. Grazul, M. Hill, E.J. Shero, M.E. Givens, C. Pomarede, M. Mazanec, C. Werkhoven, IEDM Tech. Digest 3.1.1–3.1.4 (2001)

  8. P.R. Chalker, M. Werner, S. Romani, R.J. Potter, K. Black, H.C. Aspinall, A.C. Jones, C.Z. Zhao, S. Taylor, P.N. Heys, Appl. Phys. Lett. 93, 182911 (2008)

    Article  Google Scholar 

  9. Koji Kita, Kentaro Kyuno, Akira Toriumi, Appl. Phys. Lett. 86, 102906 (2005)

    Article  Google Scholar 

  10. X. Zhao, D. Vanderbilt, Phys. Rev. B 65, 233106 (2002)

    Article  Google Scholar 

  11. J. Wang, J. Mater. Sci. 27, 5397 (1992)

    Article  Google Scholar 

  12. J.Y. Dai, P.F. Lee, K.H. Wong, H.L.W. Chan, C.L. Choy, J. Appl. Phys. 94, 912 (2003)

    Article  Google Scholar 

  13. Y.B. Losovyj, I. Ketsman, A. Sokolov, K.D. Belashchenko, P.A. Dowben, J. Tang, Z. Wang, Appl. Phys. Lett. 91, 132908 (2007)

    Article  Google Scholar 

  14. S. Govindarajan, T.S. Böscke, P. Sivasubramani, P.D. Kirsch, B.H. Lee, H–.H. Tseng, R. Jammy, U. Schröder, S. Ramanathan, B.E. Gnade, Appl. Phys. Lett. 91, 062906 (2007)

    Article  Google Scholar 

  15. S. Chen, Z. Liu, L. Feng, X. Che, X. Zhao, Appl. Phys. Lett. 103, 132902 (2013)

    Article  Google Scholar 

  16. C.-K. Lee, E. Cho, H.-S. Lee, C.S. Hwang, S. Han, Phys. Rev. B 78, 012102 (2008)

    Article  Google Scholar 

  17. M. Ji, L. Wang, Y. Xiong, J. Du, J. Rare. Earths 28, 396 (2010)

    Article  Google Scholar 

  18. G.H. Chen, Z.F. Hou, X.G. Gong, Q. Li, J. Appl. Phys. 104(7), 074101 (2008)

    Article  Google Scholar 

  19. S. Guha, V. Narayanan, Phys. Rev. Lett. 98(19), 196101 (2007)

    Article  Google Scholar 

  20. R.D. Shannon, J. Appl. Phys. 73, 348 (1993)

    Article  Google Scholar 

  21. A. Toriumi, K. Kita, K. Tomida, Y. Yamamoto, ECS Trans. 1(5), 185 (2006)

    Article  Google Scholar 

Download references

Acknowledgments

This project was supported by the Research Fund of the State Key Laboratory of Solidification Processing (58-TZ-2011), the 111 project (Contract No. B08040), National Natural Science Foundation of China (Contract No. 61376091),the Natural Science Foundation of Shaanxi province (Contract No. 2012JM6012) and the Northwestern Polytechnical University (NPU) Foundation for fundamental research (Contract No. JC20110245).

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Authors and Affiliations

  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, People’s Republic of China

    Shuai Chen, Zhengtang Liu, Liping Feng & Xingsen Che

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  1. Shuai Chen
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  2. Zhengtang Liu
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  3. Liping Feng
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Correspondence to Shuai Chen.

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Chen, S., Liu, Z., Feng, L. et al. Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric. J Mater Sci: Mater Electron 25, 749–753 (2014). https://doi.org/10.1007/s10854-013-1640-1

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  • DOI: https://doi.org/10.1007/s10854-013-1640-1

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